Parameter extraction from I-V characteristics of PV devices
Identifieur interne : 002806 ( Main/Repository ); précédent : 002805; suivant : 002807Parameter extraction from I-V characteristics of PV devices
Auteurs : RBID : Pascal:11-0061271Descripteurs français
- Pascal (Inist)
- Extraction paramètre, Caractéristique courant tension, Evaluation performance, Saturation, Cellule solaire, Panneau solaire, Système photovoltaïque, Matériau cristallin, Optimisation PSO, Forte intensité, Conversion énergie, Taux conversion, Stabilité thermique, Sulfure de gallium, Sulfure d'indium, Sulfure de cuivre, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé ternaire, Cu(In,Ga)(S,Se)2, CuInSe2.
English descriptors
- KwdEn :
- Conversion rate, Copper selenides, Copper sulfide, Crystalline material, Energy conversion, Gallium selenides, Gallium sulfide, High current, Indium selenides, Indium sulfide, Parameter extraction, Particle swarm optimization, Performance evaluation, Photovoltaic array, Photovoltaic system, Saturation, Solar cell, Ternary compound, Thermal stability, Voltage current curve.
Abstract
Device parameters such as series and shunt resistances, saturation current and diode ideality factor influence the behaviour of the current-voltage (I-V) characteristics of solar cells and photovoltaic modules. It is necessary to determine these parameters since performance parameters are derived from the I-V curve and information provided by the device parameters are useful in analyzing performance losses. This contribution presents device parameters of CuIn(Se,S)2- and Cu(In,Ga)(Se,S)2-based solar cells, as well as, CuInSe2, mono- and multicrystalline silicon modules determined using a parameter extraction routine that employs Particle Swarm Optimization. The device parameters of the CuIn(Se,S)2- and Cu(In,Ga)(Se,S)2-based solar cells show that the contribution of recombination mechanisms exhibited by high saturation current when coupled with the effects of parasitic resistances result in lower maximum power and conversion efficiency. Device parameters of photovoltaic modules extracted from I-V characteristics obtained at higher temperature show increased saturation current. The extracted values also reflect the adverse effect of temperature on parasitic resistances. The parameters extracted from I-V curves offer an understanding of the different mechanisms involved in the operation of the devices. The parameter extraction routine utilized in this study is a useful tool in determining the device parameters which reveal the mechanisms affecting device performance.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Parameter extraction from I-V characteristics of PV devices</title><author><name sortKey="Macabebe, Erees Queen B" uniqKey="Macabebe E">Erees Queen B. Macabebe</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronics, Computer and Communications Engineering, Ateneo de Manila University, Loyola Heights</s1><s2>Quezon City 1108</s2><s3>PHL</s3><sZ>1 aut.</sZ></inist:fA14><country>Philippines</country><wicri:noRegion>Quezon City 1108</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000</s1><s2>Port Elizabeth 6031</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Port Elizabeth 6031</wicri:noRegion></affiliation></author><author><name sortKey="Sheppard, Charles J" uniqKey="Sheppard C">Charles J. Sheppard</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, University of Johannesburg, PO Box 524</s1><s2>Auckland Park 2006</s2><s3>ZAF</s3><sZ>2 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Auckland Park 2006</wicri:noRegion></affiliation></author><author><name sortKey="Van Dyk, E Ernest" uniqKey="Van Dyk E">E. Ernest Van Dyk</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000</s1><s2>Port Elizabeth 6031</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Afrique du Sud</country><wicri:noRegion>Port Elizabeth 6031</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0061271</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0061271 INIST</idno><idno type="RBID">Pascal:11-0061271</idno><idno type="wicri:Area/Main/Corpus">003744</idno><idno type="wicri:Area/Main/Repository">002806</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-092X</idno><title level="j" type="abbreviated">Sol. energy</title><title level="j" type="main">Solar energy</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Conversion rate</term><term>Copper selenides</term><term>Copper sulfide</term><term>Crystalline material</term><term>Energy conversion</term><term>Gallium selenides</term><term>Gallium sulfide</term><term>High current</term><term>Indium selenides</term><term>Indium sulfide</term><term>Parameter extraction</term><term>Particle swarm optimization</term><term>Performance evaluation</term><term>Photovoltaic array</term><term>Photovoltaic system</term><term>Saturation</term><term>Solar cell</term><term>Ternary compound</term><term>Thermal stability</term><term>Voltage current curve</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Extraction paramètre</term><term>Caractéristique courant tension</term><term>Evaluation performance</term><term>Saturation</term><term>Cellule solaire</term><term>Panneau solaire</term><term>Système photovoltaïque</term><term>Matériau cristallin</term><term>Optimisation PSO</term><term>Forte intensité</term><term>Conversion énergie</term><term>Taux conversion</term><term>Stabilité thermique</term><term>Sulfure de gallium</term><term>Sulfure d'indium</term><term>Sulfure de cuivre</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>Composé ternaire</term><term>Cu(In,Ga)(S,Se)2</term><term>CuInSe2</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Device parameters such as series and shunt resistances, saturation current and diode ideality factor influence the behaviour of the current-voltage (I-V) characteristics of solar cells and photovoltaic modules. It is necessary to determine these parameters since performance parameters are derived from the I-V curve and information provided by the device parameters are useful in analyzing performance losses. This contribution presents device parameters of CuIn(Se,S)<sub>2</sub>- and Cu(In,Ga)(Se,S)<sub>2</sub>-based solar cells, as well as, CuInSe<sub>2</sub>, mono- and multicrystalline silicon modules determined using a parameter extraction routine that employs Particle Swarm Optimization. The device parameters of the CuIn(Se,S)<sub>2</sub>- and Cu(In,Ga)(Se,S)<sub>2</sub>-based solar cells show that the contribution of recombination mechanisms exhibited by high saturation current when coupled with the effects of parasitic resistances result in lower maximum power and conversion efficiency. Device parameters of photovoltaic modules extracted from I-V characteristics obtained at higher temperature show increased saturation current. The extracted values also reflect the adverse effect of temperature on parasitic resistances. The parameters extracted from I-V curves offer an understanding of the different mechanisms involved in the operation of the devices. The parameter extraction routine utilized in this study is a useful tool in determining the device parameters which reveal the mechanisms affecting device performance.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-092X</s0></fA01><fA02 i1="01"><s0>SRENA4</s0></fA02><fA03 i2="1"><s0>Sol. energy</s0></fA03><fA05><s2>85</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Parameter extraction from I-V characteristics of PV devices</s1></fA08><fA11 i1="01" i2="1"><s1>MACABEBE (Erees Queen B.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHEPPARD (Charles J.)</s1></fA11><fA11 i1="03" i2="1"><s1>VAN DYK (E. Ernest)</s1></fA11><fA14 i1="01"><s1>Department of Electronics, Computer and Communications Engineering, Ateneo de Manila University, Loyola Heights</s1><s2>Quezon City 1108</s2><s3>PHL</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Centre for Energy Research, Nelson Mandela Metropolitan University, PO Box 77000</s1><s2>Port Elizabeth 6031</s2><s3>ZAF</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, University of Johannesburg, PO Box 524</s1><s2>Auckland Park 2006</s2><s3>ZAF</s3><sZ>2 aut.</sZ></fA14><fA20><s1>12-18</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>8338A</s2><s5>354000191856520030</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>1/4 p.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0061271</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Device parameters such as series and shunt resistances, saturation current and diode ideality factor influence the behaviour of the current-voltage (I-V) characteristics of solar cells and photovoltaic modules. It is necessary to determine these parameters since performance parameters are derived from the I-V curve and information provided by the device parameters are useful in analyzing performance losses. This contribution presents device parameters of CuIn(Se,S)<sub>2</sub>- and Cu(In,Ga)(Se,S)<sub>2</sub>-based solar cells, as well as, CuInSe<sub>2</sub>, mono- and multicrystalline silicon modules determined using a parameter extraction routine that employs Particle Swarm Optimization. The device parameters of the CuIn(Se,S)<sub>2</sub>- and Cu(In,Ga)(Se,S)<sub>2</sub>-based solar cells show that the contribution of recombination mechanisms exhibited by high saturation current when coupled with the effects of parasitic resistances result in lower maximum power and conversion efficiency. Device parameters of photovoltaic modules extracted from I-V characteristics obtained at higher temperature show increased saturation current. The extracted values also reflect the adverse effect of temperature on parasitic resistances. The parameters extracted from I-V curves offer an understanding of the different mechanisms involved in the operation of the devices. 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